2SD2413 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planer type(For low-frequency output amplification)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD2413 TRANSISTOR (NPN)
FEATURES
z High collector to base voltage V_CBO
z High collector to emitter voltage V_CEO
z Large collector power dissipation P_C
z Low collector to emitter saturation voltage V_CE(sat)
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
Marking:1S
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
400
400
5
100
500
150
-55~150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO I_C=100μA, I_E=0
V_(BR)CEO I_C=0.5mA, I_B=0
V_(BR)EBO I_E=100μA, I_C=0
I_CBO
V_CB=400V, I_E=0
I_EBO
V_EB=5V, I_C=0
h_FE
V_CE=5V, I_C=30mA
V_CE(sat) I_C=50mA, I_B=5mA
V_BE(sat) I_C=50mA, I_B=5mA
f_T
V_CE=30V, I_C=20mA, f=200MHz
C_ob
V_CB = 30V, I_E=0, f=1MHz
Min Typ Max Unit
400
V
400
V
5
V
50
μA
50
μA
30
1.5
V
1.5
V
40
MHz
7
pF
www.cj-elec.com
1
C,Nov,2015