2SD2396 Datasheet, PDF (1/3 Pages) Rohm – Transistor, NPN

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SD2396 TRANSISTOR (NPN)
TO – 220F
FEATURES
 Available in TO-220 F package
 Darling connection provides high dc current gain (h_FE)
 Large collector power dissipation
 Low frequency and Power amplifier
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
1. BASE
1₂₃
2. COLLECTOR
3. EMITTER
Value
80
60
6
3
2
62.5
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltag
V_(BR)CBO
I_C=50μA, I_E=0
80
Collector-emitter breakdown voltage
V_(BR)CEO
I_C=1mA,I_B=0
60
Emitter-base breakdown voltage
V_(BR)EBO
I_E=50u A,I_C=0
6
Collector cut-off current
I_CBO
V_CB=80V,I_E=0
Emitter cut-off current
I_EBO
V_EB=6V,I_C=0
DC current gain
h_FE*
V_CE=4V, I_C=0.5A
400
Collector-emitter saturation voltage
V_CE(sat)*
I_C=2A,I_B=50mA
Base-emitter saturation voltage
V_BE(sat)
I_C=2A,I_B=50mA
Collector output capacitance
C_ob
V_CB=10V,I_E=0, f=1MHz
Transition frequency
f_T
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
V_CE=5V,I_C=0.2A,f=10MHz
Typ Max
100
100
2000
0.8
1.5
55
40
Unit
V
V
V
μA
μA
V
V
pF
MHz
CLASSIFICATION OF h_FE*
RANK
RANGE
H
400-800
J
600-1200
K
1000-2000
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1
A-2,May,2016