2SD2391 Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor ( 60V, 2A)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD2391 TRANSISTOR (NPN)
FEATURES
Low V_CE(sat)
Marking: DT
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
60
V
60
V
6
V
2
A
0.5
W
150
℃
-55-150
℃
SOT-89-3L
1.BASE
2.COLLECTOR
3.EMITTER
123
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol Test conditions
V_(BR)CBO I_C=50μA,I_E=0
V_(BR)CEO I_C =1mA,I_B=0
V_(BR)EBO I_E=50μA,I_C=0
I_CBO
V_CB=50V,I_E=0
I_EBO
V_EB=5V,I_C=0
h_FE(1) V_CE=2V,I_C=0.5A
h_FE(2) V_CE=2V,I_C=1.5A
V_CE(sat) I_C=1A,I_B=50mA
f_T
V_CE=2V,I_C=0.5A, f=100MHz
Cob
V_CB=10V,I_E=0, f=1MHz
Min Typ Max Unit
60
V
60
V
6
V
0.1
μA
0.1
μA
120
270
45
0.35
V
210
MHz
21
pF
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1
C,Nov,2015