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| 2SD2152 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-92 Plastic-Encapsulate Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SD2152 TRANSISTOR (NPN)
FEATURES
z High DC Current Gain
z Low Saturation Medium Current Application
TO â 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
22
22
6
3
700
178
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
fT
Test conditions
IC= 0.05mA,IE=0
IC=1mA,IB=0
IE=0.01mA,IC=0
VCB=20V,IE=0
VEB=5V,IC=0
VCE=2V, IC=0.15mA
VCE=2V, IC=100mA
VCE=2V, IC=500mA
IC=2000mA,IB=100mA
VCE=6V,IC=50mA, f=30MHz
Min Typ
22
22
6
130
180
180
150
Max
0.1
0.1
950
0.4
Unit
V
V
V
μA
μA
V
MHz
CLASSIFICATION OF hFE
RANK
Q
RANGE
180-290
R
270-380
S
340-560
T
560-950
www.cj-elec.com
1
C,Dec,2015
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