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| 2SD2150-SOT-89 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR NPN) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
2SD2150 TRANSISTOR NPN
FEATURES
Power dissipation
PCM : 0.5
Collector current
W Tamb=25
ICM
:3 A
Collector-base voltage
V(BR)CBO : 40
V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage
V(BR)CBO Ic=50 A,IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO Ic=1mA,IB=0
20
Emitter-base breakdown voltage
V(BR)EBO IE=50 A,IC=0
6
Collector cut-off current
ICBO
VCB=30V,IE=0
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE(1) VCE=2V,IC=0.1A
180
Collector-emitter saturation voltage
VCE(sat) IC=2A,IB=100mA
Transition frequency
fT
VCE=2V,IC=0.5A ,f=100MHz
290
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
25
MAX UNIT
V
V
V
0.1
A
0.1
A
560
0.5 V
MHz
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
Q
120-270
CFQ
R
180-390
CFR
S
270-560
CFS
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