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| 2SD2137 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
2SD2137 TRANSISTOR (NPN)
FEATURES
z High Forward Current Transfer Ratio hFE which Has
Satisfactory Linearity
z Low Collector to Emitter Saturation Voltage VCE(sat)
z Allowing Supply with the Radial Taping
TO-220-3L
1. BASE
2. COLLECTOR
MAXIMUM RATINGS(Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
60
V
60
V
Emitter-Base Voltage
6
V
Collector Current -Continuous
3
A
Collector Power Dissipation
2
W
Junction Temperature
Storage Temperature
150
â
-55-150
â
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=0.1mA, IE=0
IC=30mA, IB=0
IE=0.1mA, IC=0
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB=6V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=4V, IC=1A
VCE=4V, IC=3A
Collector-emitter saturation voltage
VCE(sat) IC=3A, IB=375mA
Base-emitter voltage
VBE
VCE=4V, IC=3A
Transition frequency
fT
VCE=5V, IC=0.2A, f=10MHz
Turn-on time
ton
Switch time
Storage time
tstg
VCC=50V,IC=1A, IB1=-IB2=0.1A
Fall time
tf
CLASSIFICATION OF hFE(1)
Rank
Q
P
Range
70-150
120-250
Min Typ Max Unit
60
V
60
V
6
V
100 μA
100 μA
70
320
10
1.2
V
1.8
V
30
MHz
0.3
μs
2.5
μs
0.2
μs
O
160-320
www.cj-elec.com
1
B,Nov,2014
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