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2SD2118 Datasheet, PDF (1/2 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors
                       JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
 
                         TO-251-3LPlastic-EncapsulateTransistors

  2SD2118 75$16,6725 131 
FEATURES
z /RZ9&( VDW 9CE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A)
z ([FHOOHQW'&&XUUHQW*DLQ&KDUDFWHULVWLFV
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol ParDPHWHU Value
VCBO
&ROOHFWRU%DVH9ROWDJH

VCEO
&ROOHFWRU(PLWWHU9ROWDJH

VEBO
(PLWWHU%DVH9ROWDJH

IC
&ROOHFWRU&XUUHQW&RQWLQXRXV

PC
&ROOHFWRU3RZHU'LVVLSDWLRQ

TJ
-XQFWLRQ7HPSHUDWXUH

Tstg
6WRUDJH7HPSHUDWXUH

Unit
9
9
9
$
:
℃
℃






TO -2 5 1 -3L







 %$6(


&2//(&725

 (0,77(5


ELECTRICAL CHARA CTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
9 %5 &%2 ,& —$,( 
9 %5 &(2 ,& P$,% 
9 %5 (%2 ,( —$,& 
,&%2 9&% 9,( 
,(%2 9(% 9,& 
K)( 9&( 9,& $
9&( VDW  ,& $,% P$
I7
9&( 9,& P$I 0+]
&RE 9&% 9,( I 0+]
Min Typ Max Unit



9



9



9


 —$


 —$







9



0+]


S)
CLASSIFIC ATION RIhFE
Rank
4
Range


5

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1
C,Nov,2014