2SD2097 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-92 Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SD2097 TRANSISTOR (NPN)
TO-92
FEATURES
z Low V_CE(sat).V_CE(sat) = 0.25V (Typ.)(I_C/I_B= 4A / 0.1A)
z Excellent Dc current gain characteristics
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
20
6
5
0.625
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO I_C=50μA,I_E=0
V_(BR)CEO I_C=1mA,I_B=0
V_(BR)EBO I_E=50μA,I_C=0
I_CBO
V_CB=40V,I_E=0
I_EBO
V_EB=5V,I_C=0
h_FE
V_CE=2V,I_C=0.5A
V_CE(sat) I_C=4A,I_B=100mA
f_T
V_CE=6V,I_C=50mA,f=100MHz
C_ob
V_CB=20V,I_E=0,f=1MHz
Min Typ Max Unit
50
V
20
V
6
V
0.5
μA
0.5
μA
120
390
1
V
150
MHz
30
pF
CLASSIFICATION OF h_FE
Rank
Range
Q
120-270
R
180-390
www.cj-elec.com
1
C,Dec,2015