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| 2SD2061 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-220F Plastic-Encapsulate Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SD2061 TRANSISTOR (NPN)
FEATURES
z Low saturation voltage
z Excellent DC current gain characteristice
TO-220F
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Paramenter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Value
80
60
5
3
2
150
-55-150
Units
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC=50µA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=50µA, IC=0
ICBO
VCB=60V, IE=0
IEBO
VEB=4V, IC=0
hFE
VCE=5V, IC=0.5A
VCE(sat) IC=2A, IB=0.2A
VBE(sat) IC=2A, IB=0.2A
fT
VCE=5V, IC=0.5A, f=5MHz
Cob
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
80
V
60
V
5
V
10
µA
10
µA
100
320
1
V
1.5
V
8
MHz
70
pF
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