2SD1899-Z Datasheet, PDF (1/3 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR MP-3

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
2SD1899-Z TRANSISTOR (NPN)
FEATURES
z High h_FE
z Low VCE(sat)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
TO-251-3L
1.BASE
2.COLLECTOR
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
60
V
60
V
7
V
3
A
1
W
150
℃
-55-150
℃
3.EMITTER
ELECTRICAL CHAR ACTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn on Time
Switching Time
Storage Time
Fall Time
Symbol Test conditions
V_(BR)CBO I_C=100μA,I_E=0
V_(BR)CEO I_C =1mA,I_B=0
V_(BR)EBO I_E=100μA,I_C=0
I_CBO
V_CB=60V,I_E=0
I_EBO
V_EB=7V,I_C=0
h_FE(1) V_CE=2V,I_C=200mA
h_FE(2) V_CE=2V,I_C=600mA
h_FE(3) V_CE=2V,I_C=2A
V_CE(sat) I_C=1.5A,I_B=150mA
V_BE(sat) I_C=1.5A,I_B=150mA
f_T
V_CE=5V,I_C=1.5A
C_ob
V_CB=10V,I_E=0,f=1MHz
t_on
t_stg
V_CC=10V,I_C=1A,I_B1=-I_B2=-0.1A
t_f
Min
Typ Max
60
60
7
10
10
60
100
400
50
0.25
1.2
120
30
0.5
2.0
0.5
Unit
V
V
V
μA
μA
V
V
MHz
pF
μs
CLASSIFICATION OF h _FE(2)
Rank
Range
M
100-200
L
160-320
K
200-400
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1
D,Nov,2014