2SD1835 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Driver Applications

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SD1835 TRANSISTOR (NPN)
FEATURES
z Large Current Capacity.
z Low Collector-to-emitter Saturation Voltage.
z Fast Switching Time.
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
APPLICATIONS
z Voltage Regulators, Relay Drivers, Lamp Drivers,
Electrical Equipment.
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
6
2
750
166
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_{BE (sat)}
C_ob
f_T
Test conditions
I_C= 0.01mA,I_E=0
I_C=1mA,I_B=0
I_E=0.01mA,I_C=0
V_CB=50V,I_E=0
V_EB=4V,I_C=0
V_CE=2V, I_C=100mA
V_CE=2V, I_C=1.5A
I_C=1A,I_B=50mA
I_C=1A,I_B=50mA
V_CB=10V,I_E=0, f=1MHz
VCE=10V,IC=50mA
Min Typ Max Unit
60
V
50
V
6
V
0.1
μA
0.1
μA
100
560
40
0.4
V
1.2
V
12
pF
150
MHz
CLASSIFICATION OF h_FE(1)
RANK
R
RANGE
100-200
S
140-280
T
200-400
U
280-560
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1
D,Dec,2016