2SD1819A Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
2SD1819A TRANSISTOR (NPN)
FEATURES
 High DC Current Gain
 Complementary to 2SB1218A
 Low Collector to Emitter Saturation Voltage
APPLICATIONS
 General Purpose Amplification
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
50
VEBO Emitter-Base Voltage
7
IC
Collector Current
100
PC
Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
SOT–323
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
fT
Cob
Test conditions
IC=10µA, IE=0
IC=2mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VCE=10V, IB=0
VEB=7V, IC=0
VCE=10V, IC=2mA
VCE=2V, IC=0.1A
IC=100mA, IB=10mA
VCE=10V,IC=2mA , f=200MHz
VCB=10V, IE=0, f=1MHz
Min
Typ
60
50
7
160
90
150
3.5
CLASSIFICATION OF hFE(1)
RANK
RANGE
MARKING
Q
160–260
ZQ
R
210–340
ZR
S
290–460
ZS
Max
0.1
100
0.1
460
0.3
Unit
V
V
V
µA
µA
µA
V
MHz
pF
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