 English |
|
|
|
|
|
|
|
| 2SD1815 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – High-Current Switching Applications | |||
| |||
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3LPlastic-Encapsulate Transistors
2SD1815 TRANSISTOR (NPN)
FEATURES
z Low Collector-to-Emitter Saturation Voltage
z Excllent Linearity of hFE
z High fT
z Fast Switching Time
TO-251-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise note)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
3
A
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55 to +150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=10μA, IE=0
120
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA, IB=0
100
Emitter-base breakdown voltage
V(BR)EBO IE=10μA, IC=0
6
Collector cut-off current
ICBO
VCB=100V, IE=0
Emitter cut-off current
IEBO
VEB=4V, IC=0
DC current gain
hFE(1) VCE=5V, IC=500mA
70
hFE(2) VCE=5V, IC=2A
40
Collector-emitter saturation voltage
VCE(sat) IC=1.5A, IB=150mA
Base -emitter saturation voltage
VBE(sat) IC=1.5A, IB=150mA
Transition frequency
fT
VCE=10V, IC=500mA
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
Turn-on time
ton
Storage time
tS
VCC=50V,IC=1.5A, IB1=-IB2=-0.15A
Fall time
tf
CLASSIFICATION OF hFE(1)
Rank
Q
R
S
Range
70-140
100-200
140-280
Typ Max Unit
V
V
V
1
μA
1
μA
400
0.4
V
1.2
V
180
MHz
25
pF
100
ns
900
ns
50
ns
T
200-400
www.cj-elec.com
1
D,Nov,2014
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese