 English |
|
|
|
|
|
|
|
| 2SD1802 Datasheet, PDF (1/3 Pages) Weitron Technology – NPN PLASTIC ENCAPSULATE TRANSISTORS | |||
| |||
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3LPlastic-EncapsulateTransistors
2SD1802 TRANSISTOR (NPN)
TO-251-3L
FEATURES
z Adoption of FBET,MBIT Processes
z Large Current Capacity and Wide ASO
z Low Collector-to-Emitter Saturation Voltage
z Fast Switching Speed
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current âContinuous
3
A
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
1.BASE
2.COLLECTOR
3.EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC =10µA, IE=0
V(BR)CEO IC =1mA, IB=0
V(BR)EBO IE=10µA, IC =0
ICBO
VCB=40V, IE=0
IEBO
VEB=4V, IC=0
hFE(1) VCE=2V, IC=100mA
hFE(2) VCE=2V, IC=3A
VCE(sat) IC=2A, IB=100mA
VBE(sat) IC=2A, IB=100mA
fT
VCE=10V, IC=50mA
Cob
VCB=10V, IE=0, f=1MHz
Min Typ
60
50
6
100
35
150
25
Max Unit
V
V
V
1
ÂA
1
ÂA
560
0.5
V
1.2
V
MHz
pF
CLASSIFICATION OF hFE(1)
Rank
Range
R
100-200
S
140-280
T
200-400
U
280-560
www.cj-elec.com
1
C,Nov,2014
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese