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| 2SD1782 Datasheet, PDF (1/3 Pages) Unisonic Technologies – POWER NPN TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
2SD1782 TRANSISTOR (NPN)
SOT-23
FEATURES
z Low VCE(sat)
z High BVCEO
z Complements the 2SB1198
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
80
80
5
500
200
150
-55-150
Unit
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC=50μA, IE=0
V(BR)CEO IC=2mA, IB=0
V(BR)EBO IE=50μA, IC=0
ICBO
VCB=50V, IE=0
IEBO
VEB=4V, IC=0
hFE(1) VCE=3V, IC=100mA
VCE(sat) IC=500mA, IB=50mA
fT
VCE=10V, IC=50mA, f=100MHz
Cob
VCB=10V, IE=0, f=1MHz
CLASSIFICATION OF hFE(1)
Rank
Range
MARKING
Q
120-270
AJQ
Min Typ Max Unit
80
V
80
V
5
V
0.5 μA
0.5 μA
120
390
0.5
V
120
MHz
7.5
pF
R
180-390
AJR
www.cj-elec.com
1
BA,OJucnt,2014
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