2SD1767 Datasheet, PDF (1/4 Pages) Rohm – Medium power transistor (80V, 0.7A)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD1767 TRANSISTOR (NPN)
FEATURES
z High Breakdown Voltage and Current
z Excellent DC Current Gain Linearity
z Complement the 2SB1189
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
80
80
5
700
500
250
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
Min Typ
V_(BR)CBO I_C=50µA,I_E=0
80
V_(BR)CEO I_C=2mA,I_B=0
80
V_(BR)EBO I_E=50µA,I_C=0
5
I_CBO
V_CB=50V,I_E=0
I_EBO
V_EB=4V,I_C=0
h_FE
V_CE=3V, I_C=100mA
82
V_CE(sat) I_C=500mA,I_B=50mA
f_T
VCE=10V,IC=50mA, f=100MHz
120
C_ob
V_CB=10V, I_E=0, f=1MHz
10
Max
0.5
0.5
390
0.4
CLASSIFICATION OF h_FE
RANK
RANGE
MARKING
P
82–180
DCP
Q
120–270
DCQ
R
180–390
DCR
Unit
V
V
V
µA
µA
V
MHz
pF
www.cj-elec.com
1
C,Nov,2015