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| 2SD1766 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor (32V, 2A) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD1766 TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A)
z Complements to 2SB1188
1. BASE
2. COLLECTOR
MAXIMUM RATINGS (T =a25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
32
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
2
A
PC
Collector dissipation
500
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=50μA, IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA, IB=0
32
Emitter-base breakdown voltage
V(BR)EBO IE=50μA, IC=0
5
Collector cut-off current
ICBO
VCB=20V, IE=0
Emitter cut-off current
IEBO
VEB=4V, IC=0
DC current gain
hFE(1) VCE=3V, IC=500mA
82
Collector-emitter saturation voltage
VCE(sat) IC=2A, IB=0.2A
Transition frequency
fT
VCE=5V, IC=50mA, f=100MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
Typ Max Unit
V
V
V
1
μA
1
μA
390
0.8
V
100
MHz
30
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
P
82-180
DBP
Q
120-270
DBQ
R
180-390
DBR
www.cj-elec.com
1
C,Nov,2015
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