2SD1762 Datasheet, PDF (1/2 Pages) Rohm – Power Transistor (50V, 3A)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
2SD1762 TRANSISTOR (NPN)
FEATURES
z Low V_CE(sat)
z Complements the 2SB1185
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
5
3
2
62.5
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
Test conditions
Min Typ Max Unit
V_(BR)CBO I_C=50µA,I_E=0
60
V
V_(BR)CEO I_C=1mA,I_B=0
50
V
V_(BR)EBO I_E=50µA,I_C=0
5
V
I_CBO
V_CB=40V,I_E=0
1
μA
I_EBO
h_FE*
V_CE(sat)*
V_EB=4V,I_C=0
V_CE=3V, I_C=0.5A
I_C=2A,I_B=0.2A
1
μA
60
320
1
V
C_ob
V_CB=10V,I_E=0, f=1MHz
40
f_T*
VCE=5V,IC=0.5A, f=30MHz
90
pF
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
D
60-120
E
100-200
F
160-320
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1
D,Nov,2014