2SD1760 Datasheet, PDF (1/2 Pages) Rohm – Power Transistor 50V, 3A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
2SD1760 TRANSISTOR (NPN)
TO-251-3L
FEATURES
z
Low V_CE(sat)
z Complements the 2SB1184
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
60
V
V_CEO
Collector-Emitter Voltage
50
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current -Continuous
3
A
P_C
Collector Power Dissipation
1.5
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55 to +150
℃
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless other wise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO I_C=50μA, I_E=0
V_(BR)CEO I_C=1mA, I_B=0
V_(BR)EBO I_E=50μA, I_C=0
I_CBO
V_CB=40V, I_E=0
I_EBO
V_EB=4V, I_C=0
h_FE V_CE=3V, I_C=500mA
V_CE(sat) I_C=2A, I_B=200mA
f_T
V_CE=5V, I_C=500mA,f=30MHz
C_ob
V_CB=10V, I_E=0, f=1MHz
Min Typ Max
60
50
5
1
1
82
390
1
90
40
Unit
V
V
V
μA
μA
V
MHz
pF
CLASSIFICATION of h_FE
Rank
Range
P
82-180
Q
120-270
R
180-390
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1
C,Nov,2014