2SD1758 Datasheet, PDF (1/2 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
2SD1758 TRANSISTOR (NPN)
TO-251-3L
FEATURES
z ^{Low V}CE(sat)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
40
V
V_CEO
Collector-Emitter Voltage
32
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current -Continuous
2
A
P_C
Collector dissipation
1.2
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
1.BASE
2.COLLECTOR
3.EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless other wise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
V_(BR)CBO I_C=50μA, I_E=0
40
Collector-emitter breakdown voltage
V_(BR)CEO I_C=1mA, I_B=0
32
Emitter-base breakdown voltage
V_(BR)EBO I_E=50μA, I_C=0
5
Collector cut-off current
I_CBO
V_CB=20V, I_E=0
Emitter cut-off current
I_EBO
V_EB=4V, I_C=0
DC current gain
h_FE
V_CE=3V, I_C=500mA
82
Collector-emitter saturation voltage
V_CE(sat) I_C=2A, I_B=0.2A
Transition frequency
f_T
V_CE=5V, I_C=50mA, f=100MHz
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Typ Max Unit
V
V
V
1
μA
1
μA
390
0.8
V
100
MHz
30
pF
CLASSIFICATION OF h _FE
Rank
Range
P
82-180
Q
120-270
R
180-390
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1
C,Nov,2014