2SD1757K Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (15V, 0.5A)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T ^{SOT-23 Plastic-Encapsulate Transistors}
2SD1757K TRANSISTOR (NPN)
SOT-23
FEATURES
z Optimal for muting.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
15
6.5
500
200
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Symbol
Test conditions
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
I_C=50μA,I_E=0
I_C=1mA,I_B=0
I_E=50μA,I_C=0
V_CB=20V,I_E=0
V_EB=4V,I_C=0
V_CE=3V,I_C=100mA
V_CE(sat) I_C= 500mA, I_B=50mA
f_T
V_CE=5V, I_C= 50mA ,f=100MHz
Cob VCB=10V,IE=0,f=1MHZ
Min Typ Max Unit
30
V
15
V
6.5
V
0.5
μA
0.5
μA
120
560
0.4
V
150
MHz
15
pF
CLASSIFICATION OF h_FE
Rank
Range
MARKING
Q
120-270
AAQ
R
180-390
AAR
S
270-560
AAS
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BA,OJucnt,2014