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| 2SD1664 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor (32V, 1A) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD1664 TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA)
z Complements to 2SB1132
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
32
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1
A
PC
Collector power dissipation
500
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55~150
â
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC=50μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=50μA, IC =0
ICBO
VCB=20V, IE=0
IEBO
VEB=4V, IC=0
hFE
VCE=3V, IC=100mA
VCE(sat) IC=0.5A, IB=50mA
fT
VCE=5V, IC=50mA, f=100MHz
Cob
VCB=10V, IE=0, f=1MHz
Min Typ Max Unit
40
V
32
V
5
V
0.5
μA
0.5
μA
82
390
0.4
V
150
MHz
15
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
P
82-180
DAP
Q
120-270
DAQ
R
180-390
DAR
www.cj-elec.com
1
C,Nov,2015
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