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| 2SD1616A Datasheet, PDF (1/3 Pages) Micro Electronics – NPN SILICON TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD1616A TRANSISTORï¼NPNï¼
FEATURES
z Low collector saturation voltage
z High break down voltage
z High total power dissipation
MARKING:1616A
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RÓ¨JA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, junction to Ambient
Junction Temperature
Storage Temperature
Value Unit
120
V
60
V
6
V
1
A
0.5
W
250 â/W
150
â
-55~+150 â
SOT-89-3L
1. BASE
2. COLLETOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=10μA , IE=0
120
Collector-emitter breakdown voltage
V(BR)CEO IC=2mA , IB=0
60
Emitter-base breakdown voltage
V(BR)EBO IE=10μA, IC=0
6
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB=6V, IC=0
DC current gain*
hFE1
VCE=2V, IC=100mA
135
hFE2
VCE=2V, IC=1A
81
Collector-emitter saturation voltage *
VCE(sat) IC= 1A, IB=50mA
Base-emitter saturation voltage *
VBE(sat) IC= 1A, IB=50mA
Base-emitter voltage *
VBE
VCE= 2V, IC=50mA
0.6
Transition frequency
fT
VCE=2V, IC= 100mA
100
Output capacitance
Cob
VCB=10 V,IE= 0, f=1MHz
Turn on time
Storage time
Fall time
ton
tS
Vcc=10V, IC=100mA,
IB1=-IB2=10mA
tF
*pulse test: PWâ¤350µs, δâ¤2%.
CLASSIFICATION of hFE1
Rank
Range
L
135-270
K
200-400
Typ
Max
0.1
0.1
600
0.3
1.2
0.7
19
0.07
0.95
0.07
U
300-600
Unit
V
V
V
μA
μA
V
V
V
MHz
pF
μs
μs
μs
www.cj-elec.com
1
C,Nov,2015
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