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| 2SD1616 Datasheet, PDF (1/3 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SD1616 TRANSISTOR (NPN)
FEATURES
z Low VCE(sat)
z Complementary Transistor with The 2SB1116
TO â 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
6
1
750
166
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
IEBO
hFE(1)*
hFE(2)*
VCE(sat) *
VBE (sat) *
VBE*
Collector output capacitance
Cob
Transition frequency
fT
*Pulse test: pulse width â¤350μs, duty cycle⤠2.0%.
Test conditions
IC= 0.01mA,IE=0
IC=2mA,IB=0
IE=0.01mA,IC=0
VCB=60V,IE=0
VEB=6V,IC=0
VCE=2V, IC=100mA
VCE=2V, IC=1A
IC=1A,IB=50mA
IC=1A,IB=50mA
VCE=2V, IC=50mA
VCB=10V,IE=0, f=1MHz
VCE=2V,IC=100mA
Min Typ Max Unit
60
V
50
V
6
V
0.1
μA
0.1
μA
135
600
81
0.3
V
1.2
V
0.6
0.7
V
19
pF
100
MHz
CLASSIFICATION OF hFE
RANK
L
RANGE
135-270
K
200-400
U
300-600
www.cj-elec.com
1
C,Dec,2015
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