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| 2SD1499 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high power amplification) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-2/ Plastic-Encapsulate Transistors
2SD1499 TRANSISTOR (NPN)
FEATURES
z Extremely Satisfactory Linearity of the Forward Current
Transfer Ratio hFE
z Wide Safe Operation Area
z High Transition Frequency fT
z Full-pack Package which can be Installed to the Heat Sink with
One Screw.
TO-252-2L
1.BASE
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction temperature
Storage Temperature
Value
Unit
100
V
100
V
5
V
5
A
1.25
W
150
â
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE
Cob
fT
Test conditions
IC=100μA,IE=0
IC=10mA,IB=0
IE=100μA,IC=0
VCE=50V,IB=0
VCB=100V,IE=0
VEB=3V,IC=0
VCE=5V,IC=20mA
VCE=5V,IC=1A
VCE=5V,IC=3A
IC=3A,IB=0.3A
VCE=5V,IC=3A
VCB=10V,IE=0,f=1MHz
VCE = 5 V, IC = 0.5 A, f = 1 MHz
Min Typ
100
100
5
20
60
20
90
20
Max Unit
V
V
V
50
µA
50
µA
50
µA
200
2
V
1.8
V
pF
MHz
CLASSIFICATION OF hFE2
Rank
Range
Q
60-120
P
100-200
www.cj-elec.com
1
B,Mar,2016
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