2SD1468S Datasheet, PDF (1/3 Pages) Rohm – Muting Transistor (15V, 1A)

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SD1468S TRANSISTOR (NPN)
TO-92S
FEATURES
z Low Saturation Voltage
z Ideal for Voltage, High Current Drives,
z High DC Current Gain and High Current
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1. EMITTER
2. COLLECTOR
3. BASE
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
30
V
12 ₃
V_CEO
Collector-Emitter Voltage
15
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current -Continuous
1
A
P_C
Collector Power Dissipation
300
mW
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO I_C=50μA, I_E=0
V_(BR)CEO I_C=1mA, I_B=0
V_(BR)EBO I_E=50μA, I_C=0
I_CBO
V_CB=20V, I_E=0
I_EBO
V_EB=4V, I_C=0
h_FE
V_CE=3V, I_C=100mA
V_CE(sat) I_C=500mA, I_B=B 50mA
f_T
V_CE=5V, I_C=50mA, f=100MHz
C_ob
V_CB=10V, I_E=0, f=1MHz
Min Typ Max Unit
30
V
15
V
5
V
0.5
μA
0.5
μA
120
560
0.4
V
50
MHz
30
pF
CLASSIFICATION OF h_FE
Rank
Range
Q
120-270
R
180-390
S
270-560
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