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| 2SD1306 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial | |||
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JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SD1306 TRANSISTOR (NPN)
ApplicationLow
z frequency amplifier, Muting
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector -Base Voltage
30
VCEO
Collector-Emitter Voltage
15
VEBO
Emitter-Base Voltage
5
IC
Continuous Collector Current
0.7
PC
Collector Dissipation
0.15
RθJA
Thermal Resistance from Junction to Ambient
833
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE*
Collector-emitter saturation voltage
VCE(sat) *
Base-emitter voltage
VBE *
Transition frequency
fT*
* Pulse test: Pulse Width â¤300μs, Duty Cycle⤠2.0%.
IC=10uA,IE=0
IC=1mA,IB=0
IE=10uA, IC=0
VCB=20V,IE=0
VEB=4V,IC=0
VCE=1V,IC=150mA
IC=500mA,IB=50mA
VCE=1V,IC=150mA
VCE=1V,f=150MHz
30
15
5
250
250
CLASSIFICATION of hFE
Rank
D
E
Range
250-500
400-800
Marking
ND
NE
Unit
V
V
V
A
W
â/ W
â
â
Max Unit
V
V
V
1
uA
1
uA
800
0.5
V
1
V
MHz
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CA,JOucnt,2014
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