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| 2SD1247 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – T O-92MOD Plastic-Encapsulate Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92MOD Plastic-Encapsulate Transistors
TO â 92M
2SD1247 TRANSISTOR (NPN)
TO â 92MOD
1. COLLECTOR
1. EMITTER
FEATURES
2. BASE
z Low Saturation Voltage
z Large Current Capacity and Wide ASO
2. COLLECTOR
3. EMITTER
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
25
6
2.5
1
125
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
Cob
fT
Test conditions
IC= 100µA,IE=0
IC=1mA,IB=0
IE=100µA,IC=0
VCB=20V,IE=0
VEB=4V,IC=0
VCE=2V, IC=100mA
VCE=2V, IC=1.5A
IC=1.5A,IB=75mA
IC=1.5A,IB=75mA
VCB=10V,IE=0, f=1MHz
VCE=10V,IC=50mA
Min Typ Max Unit
30
V
25
V
6
V
0.1
μA
0.1
μA
100
560
65
0.4
V
1.2
V
19
pF
150
MHz
CLASSIFICATION OF hFE
RANK
RANGE
R
100-200
S
140-280
T
200-400
U
280-560
www.cj-elec.com
1
C,Mar,2016
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