2SD1119 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification0

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD1119 TRANSISTOR (NPN)
FEATURES
z Low collector-emitter saturation voltage VCE(sat)
z Satisfactory operation performances at high efficiency with the low
voltage power supply.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
40
25
7
3
500
150
-55~150
Unit
V
V
V
A
mW
℃
℃
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
Symbol
Test conditions
V_(BR)CBO I_C =100μA, I_E=0
V_(BR)CEO I_C =1mA, I_B=0
V_(BR)EBO I_E=10μA, I_C=0
I_CBO
V_CB=10V, I_E=0
I_EBO
V_EB=6V, I_C=0
h_FE(1) V_CE=2V, I_C=500mA
h_FE(2) V_CE=2V, I_C=2A
V_CE(sat) I_C=3A, I_B=0.1A
f_T
V_CE=6V, I_C=50mA, f=200MHz
C_ob
V_CB=20V, f=1MHz
Q
230-380
TQ
Min Typ Max Unit
40
V
25
V
7
V
0.1
μA
0.1
μA
230
600
150
1
V
150
MHz
50
pF
R
340-600
TR
www.cj-elec.com
1
C,Oct,2015