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| 2SD1037 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
2SD1037 TRANSISTOR (NPN)
FEATURES
z High Breakdown Voltage
z High Speed Switching
TO-3P
1.BASE
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
150
120
6
30
3.5
35.7
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO*
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE(1)
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE (sat)
Transition frequency
fT
Collector output capacitance
Cob
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
Test conditions
IC=5mA,IE=0
IC=50mA,IB=0
IE=5mA,IC=0
VCB=80V,IE=0
VEB=6V,IC=0
VCE=4V, IC=10A
IC=10A,IB=1A
IC=10A,IB=1A
VCE=4V,IC=1A
VCB=10V,IE=0, f=1MHz
Min Typ Max Unit
150
V
120
V
6
V
5
uA
5
uA
20
0.5
V
1.5
V
1.5
MHz
210
pF
www.cj-elec.com
1
B,Nov,2014
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