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| 2SD1005 Datasheet, PDF (1/3 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD1005 TRANSISTOR (NPN)
FEATURES
z Small Flat Package
z High Breakdown Voltage
z Excellent DC Current Gain Linearity
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
100
80
5
1
500
250
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=0.1mA,IE=0
100
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
80
Emitter-base breakdown voltage
V(BR)EBO IE=0.1mA,IC=0
5
Collector cut-off current
ICBO
VCB=100V,IE=0
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE(1)* VCE=2V, IC=100mA
90
hFE(2)* VCE=2V, IC=500mA
25
Collector-emitter saturation voltage
VCE(sat)* IC=500mA,IB=50mA
Base-emitter saturation voltage
VBE(sat)* IC=500mA,IB=50mA
Base-emitter voltage
VBE*
VCE=10V, IC=10mA
0.6
Transition frequency
fT
VCE=5V,IC=10mA
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
*Pulse test
CLASSIFICATION OF hFE(1)
RANK
RANGE
MARKING
W
90â180
BW
V
135â270
BV
Typ Max
0.1
0.1
400
0.5
1.5
0.7
160
12
U
200â400
BU
Unit
V
V
V
µA
µA
V
V
V
MHz
pF
www.cj-elec.com
1
C,Oct,2015
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