2SD0602 Datasheet, PDF (1/3 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR (NPN)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
2SD0602 TRANSISTOR (NPN)
FEATURES
 Low Collector To Emitter Saturation Voltage
 Mini Type Package
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
30
VCEO Collector-Emitter Voltage
25
VEBO Emitter-Base Voltage
5
IC
Collector Current
500
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE(1) *
hFE(2) *
Collector-emitter saturation voltage
VCE(sat)*
Transition frequency
fT
Collector output capacitance
Cob
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
Test conditions
IC=10µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VEB=5V, IC=0
VCE=10V, IC=0.15A
VCE=10V, IC=0.5A
IC=0.3A, IB=0.03A
VCE=10V,IC=0.05A, f=200MHz
VCB=10V, IE=0, f=1MHz
SOT–23
1. BASE
2. EMITTER
3. COLLECTOR
Min Typ Max Unit
30
V
25
V
5
V
0.1
µA
0.1
µA
85
340
40
0.6
V
200
MHz
15
pF
CLASSIFICATION OF hFE(1)
RANK
RANGE
MARKING
Q
85–170
WQ1
R
120–240
WR1
S
170–340
WS1
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BA,OJucnt,2014