2SC5663 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SOT-723 Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-723 Plastic-Encapsulate Transistors
2SC5663 TRANSISTOR (NPN)
FEATURES
z High current.
z Low V_CE(sat). V_CE(sat)≤250mV at I_C = 200mA / I_B = 10mA
MARKING: BX
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
15
V
12
V
6
V
0.5
A
0.15
W
150
℃
-55~+150 ℃
SOT-723
3
1
2
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO
I_C=10μA, I_E=0
V_(BR)CEO
I_C=1mA, I_B=0
V_(BR)EBO
I_E=10μA, I_C=0
I_CBO
V_CB=15 V, I_E=0
I_EBO
V_EB=6V, I_C=0
h_FE
V_CE=2V, I_C=10mA
V_CE(sat)
I_C=200mA,I_B=10mA
f_T
V_CE=2V,I_C=10mA, f=100MHz
C_ob
V_CB=10V,I_E=0,f=1MHz
Min
15
12
6
270
Typ Max Unit
V
V
V
0.1
μA
0.1
μA
680
0.25
V
320
MHz
7.5
pF
wwwwww..ccj-j-eelelecc.c.coomm
1
B,Nov,2016