2SC554 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SOT-89-3L Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SC554 TRANSISTOR (NPN)
FEATURES
z Low Saturation Voltage
z High Speed Switching
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MARKING: C554
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol Para
meter
Value
Unit
V_CBO
Collector-Base Voltage
10
V
V_CEO
Collector-Emitter Voltage
10
V
V_EBO
Emitter-Base Voltage  V
I_C
Collector Current  A
P_C
Collector Power Dissipation
500
mW
R_θJA
Thermal Resistance From Junction To Ambient
250
℃/W
T_j
Junction Temperature
150
℃
T_stg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation _voltage
Transition frequency
Collector output capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
T est conditions
Min Typ Max
I_C=mA,I_E=0
10
I_C=1mA,I_B=0
10
I_E=1mA,I_C=0
V_CB=10V,I_E=0
1
V_EB=4V,I_C=0
1
V_CE=3V, I_C=100mA
82
270
I_C=500mA,I_B=25mA
0.2
IC=1A,I B= ⁵⁰ mA
0.3
VCE=5V,IC=100mA
30
V_CB=10V, I_E=0, f=1MHz
16
Unit
V
V
V
µA
µA
V
V
MHz
pF
www.cj-elec.com
1
A-1,Jul,2016