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| 2SC536S Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-92S Plastic-Encapsulate Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92S Plastic-Encapsulate Transistors
2SC536S TRANSISTOR (NPN)
FEATURES
z General Purpose Switching Application
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
30
5
100
300
417
150
-55~+150
TO â 92S
1. EMITTER
2. COLLECTOR
3. BASE
12 3
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
Cob
fT
Test conditions
IC=100µA,IE=0
IC=1mA,IB=0
IE=100µA,IC=0
VCB=35V,IE=0
VEB=4V,IC=0
VCE=6V, IC=1mA
IC=50mA,IB=5mA
VCB=6V,IE=0, f=1MHz
VCE=6V,IC=1mA, f=100MHz
Min Typ Max Unit
40
V
30
V
5
V
1
μA
1
μA
60
960
0.5 V
3.5
pF
100
MHz
CLASSIFICATION OF hFE
RANK
D
RANGE
60-120
E
100-200
F
160-320
G
280-560
H
480-960
www.cj-elec.com
1
DA,Junl,2,2001164
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