2SC536 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – TRANSISTOR (NPN)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC536 TRANSISTOR (NPN)
FEATURES
z General Purpose Amplifier Transistor
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
30
5
0.1
0.4
312
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
C_ob
f_T
Test conditions
I_C= 0.1mA,I_E=0
I_C=1mA,I_B=0
I_E=0.1mA,I_C=0
V_CB=35V,I_E=0
V_EB=4V,I_C=0
V_CE=6V, I_C=1mA
I_C=50mA,I_B=5mA
V_CB=6V, f=1MHz
VCE=6V,IC=1mA
Min Typ Max Unit
40
V
30
V
5
V
1
μA
1
μA
60
960
0.5
V
3.5
pF
100
MHz
CLASSIFICATION OF h_FE
RANK
D
RANGE
60-120
E
100-200
F
160-320
G
280-560
H
480-960
www.cj-elec.com
1
C,Dec,2015