2SC5345 Datasheet, PDF (1/3 Pages) AUK corp – NPN Silicon Transistor (RF amplifier)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T ^{SOT-23 Plastic-Encapsulate Transistors}
2SC5345 TRANSISTOR (NPN)
FEATURES
z RF amplifier
z High current transition frequency fT=550MHz(Typ.),
[VCE=6V, IE=-1mA]
z Low output capacitance :
Cob=1.4pF(Typ.) [VCB=6V, IE=0]
z Low base time constant and high gain
z Excellent noise response
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Marking: 5345
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
30
V
V_CEO
Collector-Emitter Voltage
20
V
V_EBO
Emitter-Base Voltage
4
V
I_C
Collector Current
20
mA
P_C
Collector Power dissipation
300
mW
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
I_C=10μA, I_E=0
I_C=5mA, I_B=0
I_E=10μA, I_C=0
V_CB=30V, I_E=0
V_EB=4V, I_C=0
V_CE=6V, I_C=1mA
I_C=10mA, I_B=1mA
V_CE=6V, I_C=1mA
V_CB=6V, I_E=0, f=1MHz
Min Typ Max Unit
30
V
20
V
4
V
0.5
μA
0.5
μA
40
240
0.3
V
550
MHz
1.4
pF
CLASSIFICATION OF h_FE
Rank
Range
R
40-80
O
70-140
Y
120-240
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BA,OJucnt,2014