2SC5344 Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor (Audio power amplifier application)

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SC5344 TRANSISTOR (NPN)
FEATURES
z Audio power amplifier application
z High h_FE : h_FE=100~320
z Complementary to 2SA1981
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
5
800
200
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Collector-base breakdown voltage
V_(BR)CBO I_C = 0.1mA, I_B=0
35
Collector-emitter breakdown voltage
V_(BR)CEO I_C = 10mA, I_B=0
30
Emitter-base breakdown voltage
V_(BR)EBO I_E= 0.01mA, I_C=0
5
Collector cut-off current
I_CBO
V_CB=35V , I_E=0
Emitter cut-off current
I_EBO
V_EB= 5V, I_C=0
DC current gain
h_FE
V_CE=1V, I_C= 100mA
100
Collector-emitter saturation voltage
V_CE(sat)
I_C= 500mA, I_B=50mA
Transition frequency
f_T
V_CE=5V, I_C=10mA
120
Collector Output Capacitance
C_ob
V_CB=10V,I_E= 0,f=1MHz
13
Max
Unit
V
V
V
0.1
μA
0.1
μA
320
0.5
V
MHz
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
O
100-200
FAO
Y
160-320
FAY
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