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| 2SC5200 Datasheet, PDF (1/2 Pages) Unisonic Technologies – POWER AMPLIFIER APPLICATIONS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
2SC5200 TRANSISTOR (NPN)
FEATURES
z High Collector Current Capability
z High Power Dissipation
z High Frequency
z High Voltage
z Complement to 2SA1943
TO â 3P
1. BASE
2. COLLECTOR
3. EMITTER
APPLICATIONS
z High-Fidelity Audio Output Amplifier
z General Purpose Power Amplifier
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
PCM
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Collector Power Dissipation (TC=25â)
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
230
230
5
15
3.5
150
36
150
-55~+150
Unit
V
V
V
A
W
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max
Collector-base breakdown voltage
V(BR)CBO IC=0.1mA,IE=0
230
Collector-emitter breakdown voltage
V(BR)CEO* IC=50mA,IB=0
230
Emitter-base breakdown voltage
V(BR)EBO IE=0.1mA,IC=0
5
Collector cut-off current
ICBO
VCB=230V,IE=0
5
Emitter cut-off current
IEBO
VEB=5V,IC=0
5
DC current gain
hFE(1)
VCE=5V, IC=1A
55
160
hFE(2)*
VCE=5V, IC=7A
35
Collector-emitter saturation voltage
VCE(sat)
IC=8A,IB=0.8A
3
Base-emitter voltage
VBE
VCE=5V, IC=7A
1.5
Collector output capacitance
Cob
VCB=10V,IE=0, f=1MHz
200
Transition frequency
fT
VCE=5V,IC=1A
30
*Pulse test
CLASSIFICATION OF hFE (1)
RANK
R
O
RANGE
55-110
80-160
Unit
V
V
V
μA
μA
V
V
pF
MHz
www.cj-elec.com
1
B,Nov,2014
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