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| 2SC5171 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SC5171 TRANSISTOR (NPN)
FEATURES
z High Transition Frequency
z Power Amplifier Applications
TO â 220F
1. BASE
2. COLLECTOR
3. EMITTER
123
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
180
180
5
2
2
62.5
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
V(BR)CBO
V(BR)CEO*
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)*
VCE(sat)
VBE
Cob
fT
Test conditions
IC=100µA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
VCB=180V,IE=0
VEB=5V,IC=0
VCE=5V, IC=0.1A
VCE=5V, IC=1A
IC=1A,IB=100mA
VCE=5V, IC=1A
VCB=10V,IE=0, f=1MHz
VCE=5V,IC=300mA
Min Typ Max Unit
180
V
180
V
5
V
5
μA
5
μA
100
320
50
1
V
1.5
V
16
pF
200
MHz
www.cj-elec.com
1
C,May,2016
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