2SC4944 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-353 Plastic-Encapsulate Transistors
2SC4944 DUAL TRANSISTOR (NPN+NPN)
Features
z Small package (dual type)
z High voltage and high current
z High h_FE, excellent h_FE linearity
z Complementary to 2SA1873
SOT-353
Marking: LY LGR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
150
200
150
-55 to150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
V_(BR)CBO I_C=100μA,I_E=0
60
Collector-emitter breakdown voltage
V_(BR)CEO I_C=1mA,I_B=0
50
Emitter-base breakdown voltage
V_(BR)EBO I_E=100μA,I_C=0
5
Collector cut-off current
I_CBO
V_CB=60V,I_E=0
Emitter cut-off current
I_EBO
V_EB=5V,I_C=0
DC current gain
h_FE
V_CE=6V,I_C=2mA
120
Collector-emitter saturation voltage
V_CE(sat) I_C=100mA,I_B=10mA
Transition frequency
f_T
V_CE=10V,I_C=1mA
80
Collector output capacitance
C_ob
V_CB=10V,I_E=0,f=1MHz
Units
V
V
V
mA
mW
℃
℃
Typ Max Unit
V
V
V
0.1
μA
0.1
μA
400
0.25
V
MHz
3.5
pF
CLASSIFICATION OF h_FE
Rank
Range
Marking
Y
120-240
LY
GR
200-400
LGR
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