2SC4738 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
2SC4738 TRANSISTOR (NPN)
FEATURES
 High Voltage and Current
 High DC Current Gain
 Complementary to 2SA1832
 Small Package
SOT–523
APPLICATIONS
 General Purpose Amplification
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
50
VEBO Emitter-Base Voltage
5
IC
Collector Current
150
PC
Collector Power Dissipation
100
RΘJA Thermal Resistance From Junction To Ambient
1250
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
VCE=6V, IC=2mA
IC=100mA, IB=10mA
VCE=10V,IC=1mA
VCB=10V, IE=0, f=1MHz
Min
Typ
60
50
5
120
80
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
Y
120–240
LY
GR
200–400
LG
BL
350–700
LL
Max
100
100
700
0.25
3.5
Unit
V
V
V
nA
nA
V
MHz
pF
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