2SC4672 Datasheet, PDF (1/4 Pages) Rohm – Low Frequency Transistor (50V, 2A)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SC4672 TRANSISTOR (NPN)
FEATURES
z Low Saturation Voltage
z Excellent h_FE Characteristics
z Complements the 2SA1797
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
6
2
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
Min Typ Max Unit
V_(BR)CBO I_C=50µA,I_E=0
60
V
V_(BR)CEO I_C=1mA,I_B=0
50
V
V_(BR)EBO I_E=50µA,I_C=0
6
V
I_CBO
V_CB=60V,I_E=0
0.1
µA
I_EBO
V_EB=5V,I_C=0
0.1
µA
h_FE
V_CE=2V, I_C=500mA
82
390
V_CE(sat) I_C=1A,I_B=50mA
0.35
V
f_T
VCE=2V,IC=0.5A, f=100MHz
210
MHz
C_ob
V_CB=10V, I_E=0, f=1MHz
25
pF
CLASSIFICATION OF h_FE
RANK
RANGE
MARKING
P
82–180
DKP
Q
120–270
DKQ
R
180–390
DKR
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1
C,Oct,2015