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2SC4618 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – NPN General Purpose Transistor | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
2SC4618 TRANSISTOR (NPN)
FEATURES
ï¬ High Voltage and Current
ï¬ High DC Current Gain
ï¬ Complementary to 2SC4738
ï¬ Small Package
APPLICATIONS
ï¬ General Purpose Amplification
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
40
VCEO Collector-Emitter Voltage
25
VEBO Emitter-Base Voltage
5
IC
Collector Current
50
PC
Collector Power Dissipation
150
RÎJA Thermal Resistance From Junction To Ambient
833
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
SOTâ523
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=24V, IE=0
VEB=3V, IC=0
VCE=6V, IC=1mA
IC=10mA, IB=1mA
VCE=6V,IC=1mA , f=100MHz
VCB=6V, IE=0, f=1MHz
Min
Typ
Max Unit
40
V
25
V
5
V
500
nA
500
nA
56
270
0.3
V
150
MHz
2.2
pF
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
N
56â120
AN
P
82â180
AP
Q
120â270
AQ
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