2SC4617 Datasheet, PDF (1/4 Pages) Motorola, Inc – NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
2SC4617 TRANSISTOR (NPN)
SOT-523
FEATURES
z Low Cob:Cob=2.0pF(Typ)
z Complement to 2SA1774
1. BASE
2. EMTTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Value
60
50
7
150
150
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h_FE
Rank
Range
Marking
Symbol Test conditions
V_(BR)CBO I_C=50uA, I_E=0
V_(BR)CEO I_C=1mA, I_B=0
V_(BR)EBO I_E=50uA, I_C=0
I_CBO
V_CB=60V, I_E=0
I_EBO
V_EB=7V, I_C=0
h_FE
V_CE=6V, I_C=1mA
V_CE(sat) I_C=50mA, I_B=5mA
f_T
V_CE=12V, I_C=2mA, f=100MHz
C_ob
V_CB=12V, I_E=0, f=1MHz
Q
120-270
BQ
R
180-390
BR
Min Typ Max Unit
60
V
50
V
7
V
0.1
μA
0.1
μA
120
560
0.4
V
180
MHz
3.5
pF
S
270-560
BS
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