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| 2SC4548 Datasheet, PDF (1/3 Pages) Unisonic Technologies – HIGH VOLTAGE DRIVER APPLICATION | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SC4548 TRANSISTOR (NPN)
FEATURES
z Small Flat Package
z High Breakdown Voltage
z Excellent hFE Linearity
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
400
400
5
200
500
250
150
-55~+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
IC=10µA,IE=0
IC=1mA,IB=0
IE=10µA,IC=0
VCB=300V,IE=0
VEB=4V,IC=0
VCE=10V, IC=50mA
IC=50mA,IB=5mA
IC=50mA,IB=5mA
VCE=30V,IC=10mA
VCB=30V, IE=0, f=1MHz
Min Typ Max Unit
400
V
400
V
5
V
0.1
µA
0.1
µA
60
200
0.6
V
1
V
70
MHz
4
pF
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
D
60â120
E
100â200
CN
www.cj-elec.com
1
C,Oct,2015
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