2SC4544 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSE TYPE (HIGH VOLTAGE SWITCHING AND AMPLIFIER, COLOR TV HORIZONTAL DIRVER, CHROMA OUTPUT APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
2SC4544 TRANSISTOR (NPN)
FEATURES
z High voltage: V _{(BR) CEO} = 300 V
z Small collector output capacitance: C_ob = 3.0 pF (typ.)
z Collector metal (fin) is fully covered with mold resin.
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
300
V
300
V
7
V
0.1
A
2
W
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
V_(BR)CBO I_C=100µA,I_E=0
300
Collector-emitter breakdown voltage
V_(BR)CEO I_C=10mA,I_B=0
300
Emitter-base breakdown voltage
V_(BR)EBO I_E=100µA,I_C=0
7
Collector cut-off current
I_CBO
V_CB=240V,I_E=0
Emitter cut-off current
I_EBO
V_EB=7V,I_C=0
DC current gain
h_FE(1) V_CE=10V,I_C=4mA
20
h_FE(2) V_CE=10V,I_C=20mA
30
Collector-emitter saturation voltage
V_CE(sat) I_C=10mA, I_B=1mA
Base-emitter saturation voltage
V_BE(sat) I_C=10mA, I_B=1mA
Transition frequency
f_T
V_CE=10V,I_C=20mA
50
Collector output capacitance
C_ob
V_CB=20V,I_E=0,f=1MHz
Typ Max Unit
V
V
V
1.0
µA
1.0
µA
200
1.0
V
1.0
V
70
MHz
3.0
pF
www.cj-elec.com
1
C,Nov,2014