2SC4115 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – Low Frequency Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SC4115 TRANSISTOR (NPN)
FEATURES
z Low V_CE(sat).V_CE(sat) = 0.2V (Typ.)(I_C / I_B = 2A / 0.1A)
z Excellent current gain characteristics.
z Complements to 2SA1585
SOT-89-3L
1. BASE
1
2. COLLECTOR
2
3
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
20
6
3
500
150
-55~150
Unit
V
V
V
A
mW
℃
℃
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage*
Transition frequency
*pulse test
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
Test conditions
I_C= 50μA, I_E=0
I_C=1mA , I_B=0
I_E=50μA, I_C=0
V_CB=30V, I_E=0
V_EB= 5V, I_C=0
V_CE=2V, I_C= 0.1A
I_C= 2A, I_B=0.1A
V_CE=2V, I_C=0.5 A
F=100MHz
Min
Typ
Max Unit
40
V
20
V
6
V
0.1
μA
0.1
μA
120
560
0.5
V
200
290
MHz
CLASSIFICATION OF h_FE
Rank
Range
marking
Q
120-270
4115Q
R
180-390
4115R
S
270-560
4115S
www.cj-elec.com
1
C,Oct,2015