2SC4097 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor (32V, 0.5A)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T ^{SOT-323 Plastic-Encapsulate Transistors}
2SC4097 TRANSISTOR (NPN)
FEATURES
z High I_CMax. =0.5A
z Low V_CE(sat).Optimal for low voltage operation.
z Complements the 2SA1577
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
40
VCEO Collector-Emitter Voltage
32
VEBO Emitter-Base Voltage
5
IC
Collector Current
500
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
SOT-323
3
1
2
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Symbol
Test conditions
V_(BR)CBO I_C=100μA,I_E=0
V_(BR)CEO I_C=1mA,I_B=0
V_(BR)EBO I_E=100μA,I_C=0
I_CBO
V_CB=20V,I_E=0
I_EBO
V_EB=4V,I_C=0
h_FE
V_CE=3V,I_C=10mA
V_CE(sat) I_C=500mA, I_B=50mA
f_T
V_CE=5V, I_C=20mA,f =100MHz
Cob
V_CB=10V,I_E=0,f=1MHZ
CLASSIFICATION OF h_FE
Rank
Range
MARKING
P
82-180
CP
Q
120-270
CQ
Min Typ Max Unit
40
V
32
V
5
V
1
μA
1
μA
82
390
0.4
V
250
MHz
6
pF
R
180-390
CR
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