2SC4003 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Voltage Driver Applications

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
2SC4003 TRANSISTOR (NPN)
FEATURES
High h_FE
Low V_CE(sat)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
400
400
5
0.2
1
150
-55-150
Unit
V
V
V
A
W
℃
℃
TO-251 -3L
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol T est condi tions
Min
Typ Max
Collector-base breakdown voltage
= V_(BR)CBO I_C=10µA,I_E 0
400
Collector-emitter breakdown voltage = V(BR)CEO IC=1mA,IB 0
400
Emitter-base breakdown voltage
= V_(BR)EBO I_E=10µA,I_C 0
5
Collector cut-off current
= I_CBO V_CB=300V,I_E 0
0.1
Emitter cut-off current
= I_EBO V_EB=4V,I_C 0
0.1
DC current gain
= h_FE V_CE=10V,I_C 50mA
60
200
Collector-emitter saturation voltage
= V_CE(sat) I_C=50mA,I_B 5mA
0.6
Base-emitter saturation voltage
= V_BE(sat) I_C=50mA,I_B 5mA
1
Transition frequency
CLASSIFICATION OF h_FE
Rank
Range
f_T
V_CE=3= 0V,I_C 10mA
D
60-120
70
E
100-200
Unit
V
V
V
µA
µA
V
V
MHz
www.cj-elec.com
1
C,Nov,2014